| PART |
Description |
Maker |
| NE5550279A-T1A-A NE5550279A-A NE5550279A-T1-A |
Silicon Power LDMOS FET
|
California Eastern Labs
|
| PTFB181702FCV1R0 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PTFA181001F |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies
|
| NE55410GR07 |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
California Eastern Labs
|
| PTFA260451E |
Thermally-Enhanced High Power RF LDMOS FET 45 W, 2.62-2.68 GHz
|
Infineon Technologies AG
|
| PTFA210701E PTFA210701F |
Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 鈥?2170 MHz
|
Infineon Technologies AG
|
| PTFA210301E |
Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110-2170 MHz
|
Infineon Technologies AG
|
| PXAC182908FV-V1 |
High Power RF LDMOS FET 240W, 28V, 1805 - 1880 MHz
|
Wolfspeed
|
| PTF240101S |
Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400-2700 MHz
|
Infineon Technologies AG
|
